Toshiba Begins Shipping Test Samples of 1200V SiC MOSFET for AI Data Center Power Systems
Toshiba: TW007D120E, a 1200V trench-gate SiC MOSFET • Photo Credit: Toshiba
KAWASAKI, Japan, May 21, 2026 (TECH INFO SCENE) — Toshiba Electronic Devices & Storage Corporation has begun shipping test samples of its new 1200-volt trench-gate silicon carbide (SiC) MOSFET, designed for power supply systems in next-generation AI data centers and renewable energy equipment.
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Technology News •
The product, identified as TW007D120E, is intended to address increasing power demands driven by generative artificial intelligence workloads and the adoption of high-voltage direct current (HVDC) architectures in data centers.
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Technology Blog •
The device is built using the company’s proprietary trench-gate structure and achieves lower on-resistance per unit area compared to its previous-generation products. According to the company, the new MOSFET reduces on-resistance per unit area by approximately 58% and improves the performance metric combining on-resistance and gate-drain charge by approximately 52%, based on internal research conducted as of May 2026.
Toshiba says these improvements are designed to reduce conduction and switching losses in power supply systems, which can contribute to improved efficiency and reduced heat generation in AI data center infrastructure.
The TW007D120E is housed in a QDPAK package that supports top-side cooling, which is intended to enhance thermal performance and power density in power conversion systems.
The company plans to prepare for mass production of the device during fiscal year 2026. In addition to data center applications, the product is suitable for photovoltaic inverters, uninterruptible power supplies, electric vehicle charging stations, energy storage systems and industrial motor systems.
Toshiba Electronic Devices & Storage Corporation develops semiconductor and storage solutions and operates globally with approximately 17,400 employees.
